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KP8N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KP8N60D This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correction and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15 B FEATURES _ + F 2.30 0.10 G 0.96 MAX VDSS=600V, ID=8A H 0.90 MAX H J _ J 1.80 + 0.20 E Drain-Source ON Resistance _ K 2.30 + 0.10 G N _ L 0.50 + 0.10 RDS(ON)(Max)=0.58 @VGS=10V F F M _ + M 0.50 0.10 Qg(typ.)= 16nC N 0.70 MIN O 0.1 MAX 1. GATE MAXIMUM RATING (Tc=25 ) 1 2 3 2. DRAIN 3. SOURCE O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 600 V ... See More ⇒

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