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View kp8n60f detailed specification:

KP8N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power supplies. _ B 15.87 0.2 + _ C 2.54 0.2 + _ D 0.8 0.1 + FEATURES _ E 3.18 + 0.1 VDSS=600V, ID=8A _ F 3.3 0.1 + _ G 12.57 0.2 + Drain-Source ON Resistance L M _ H 0.5 0.1 R + RDS(ON)(Max)=0.58 @VGS=10V _ 13.0 0.5 J + _ K 3.23 0.1 + Qg(typ.)= 16nC D L 1.47 MAX M 1.47 MAX N N H _ N 2.54 0.2 + MAXIMUM RATING (Tc=25 ) _ O 6.68 0.2 + _ Q 4.7 + 0.2 1. GATE _ R 2.76 0.2 CHARACTERISTIC SYMBOL RATING UNIT + 2. DRAIN 1 2 3 3. SOURCE VDSS Drai... See More ⇒

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