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SEMICONDUCTOR KRC107M KRC109M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J 1.05 E E K 1.45 L 25 EQUIVALENT CIRCUIT BIAS RESISTOR VALUES M 0.80 N 0.55 MAX 3 1 2 N TYPE NO. R1(k ) R2(k ) OUT O 0.75 L KRC107M 10 47 1. EMITTER R1 KRC108M 22 47 2. COLLECTOR IN 3. BASE KRC109M 47 22 R2 TO-92M COMMON MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VO Output Voltage 50 V KRC107M 109M KRC107M 30, -6 VI Input Voltage KRC108M 40, -7 V KRC109M 40, -15 IO Output Current 100 mA PD Power Dissipation 400 mW KRC... See More ⇒

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