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View krc110s-krc114s detailed specification:

SEMICONDUCTOR KRC110S KRC114S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 EQUIVALENT CIRCUIT Q L 0.55 P P M 0.20 MIN C N 1.00+0.20/-0.10 P 7 Q 0.1 MAX R1 M B 1. EMITTER 2. BASE 3. COLLECTOR E SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V PC Collector Power Dissipation 200 mW VCEO Tj Collector-Emitter Voltage 50 V Junction Temperature 150 VEBO Emitter-Base Voltage 5 V Tstg -55 150 Stora... See More ⇒

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