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View ktc3551t detailed specification:

SEMICONDUCTOR KTC3551T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + 0.2 1 G 0.95 Ultrasmall Package Facilitates Miniaturization in end Products. _ H 0.16 + 0.05 High Allowable Power Dis sipation. I 0.00-0.10 J 0.25+0.25/-0.15 Complementary to KTA1551T. K 0.60 L 0.55 H MAXIMUM RATING (Ta=25 ) J J CHARACTERISTIC SYMBOL RATING UNIT 1. EMITTER VCBO Collector-Base Voltage 80 V 2. BASE VCES 80 3. COLLECTOR Collector-Emitter Voltage V VCEO 50 VEBO Emitter-Base Voltage 5 V IC DC 1.0 TSM Collector Current A ICP Pulse 3 IB Base Current 200 mA M... See More ⇒

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