View ktc3553t detailed specification:

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SEMICONDUCTOR KTC3553T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Ultrasmall-Sized Package permitting applied sets to be _ F 1.9 + 0.2 1 G 0.95 made small and slim. _ H 0.16 + 0.05 High Allowable Power Dissipation. I 0.00-0.10 J 0.25+0.25/-0.15 Complementary to KTA1553T. K 0.60 L 0.55 H MAXIMUM RATING (Ta=25 ) J J CHARACTERISTIC SYMBOL RATING UNIT 1. EMITTER VCBO Collector-Base Voltage 60 V 2. BASE 3. COLLECTOR VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC DC 5 Collector Current A TSM ICP Pulse 7 IB Base Current 1.2 A PC * Collecto... See More ⇒

 

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