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View ktc8050s detailed specification:

SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltage 35 V L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 30 V P 7 VEBO Emitter-Base Voltage 5 V M IC Collector Current 800 mA 1. EMITTER IE Emitter Current -800 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * PC Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL T... See More ⇒

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