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View ktd1411 detailed specification:

SEMICONDUCTOR KTD1411 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A B D C FEATURES E High DC Current Gain hFE=3000(Min.) F (VCE=2V, IC=1A) G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 80 V _ + F 11.0 0.3 G 2.9 MAX VCEO Collector-Emitter Voltage 60 V M H 1.0 MAX J 1.9 MAX VEBO Emitter-Base Voltage 10 V O + _ K 0.75 0.15 N P _ + L 15.50 0.5 1 2 3 IC _ Collector Current 4 A + M 2.3 0.1 _ + N 0.65 0.15 IB O 1.6 Base Current 0.5 A 1. EMITTER P 3.4 MAX 2. COLLECTOR 3. BASE PC Collector Power Dissipation (Tc=25 ) 15 W Tj Junction Temperature 150 TO-126 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. ... See More ⇒

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