View 2sa1575 detailed specification:
SMD Type Transistors PNP Transistors 2SA1575 1.70 0.1 Features High fT. High breakdown voltage. Small reverse transfer capacitance and excellent 0.42 0.1 0.46 0.1 high-frequency characteristic. Complementary to 2SC4080 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200 Collector - Emitter Voltage VCEO -200 V Emitter - Base Voltage VEBO -4 Collector Current - Continuous IC -100 mA Collector Current - Pulse ICP -200 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -200 Collector- emitter breakdown voltage VCEO Ic= -1 mA RBE= ... See More ⇒
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BJT: GA1A4M | SBT42 | 2SA200-Y
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