View 2sc4672 detailed specification:
SMD Type Transistors NPN Transistors 2SC4672 Features 1.70 0.1 Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V IC 3 A Collector current 6 A IC (Pulse) *1 PC 0.5 W Collector power dissipation 2 W PC *2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. Single pulse, Pw=10ms *2. 40X40Xt 0.7mm Ceramic board Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50uA 60 V Collector-emitter breakdown voltage VCEO IC=1mA 50 V Emitter-base breakdown voltage VEBO IE=50uA 6 V Collector cutoff current ICBO ... See More ⇒
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2sc4672.pdf Design, MOSFET, Power
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