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2sd11642sd1164

SMD Type Transistors NPN Darlington Transistors 2SD1164 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 Features 4 Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V 0.127 0.80+0.1 max -0.1 1 Base + 0.1 2.3 0.60- 0.1 2 Collector +0.15 3 Emitter 4.60 -0.15 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 8 Collector Current - Continuous IC 2 A Collector Current - Pulse (Note.1) ICP 4 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Note.1 PW 10 ms, Duty Cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown ... See More ⇒

 

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