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View 2sj166-3 detailed specification:

SMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 RDS(ON) 50 (VGS =-4V) +0.1 1.9-0.2 Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS 7 Continuous Drain Current ID -100 mA Pulsed Drain Current (Note.1) IDM -200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Note.1 PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250 A, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -... See More ⇒

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