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View 2sj244 detailed specification:

SMD Type MOSFET P-Channel MOSFET 2SJ244 1.70 0.1 Features VDS (V) =-12V D ID =-2 A 0.42 0.1 0.46 0.1 RDS(ON) 0.8 (VGS =-4V) G RDS(ON) 0.9 (VGS =-2.5V) 1.Gate 2.Drain 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 7 Continuous Drain Current ID -2 A Pulsed Drain Current (Note.1) IDM -4 Power Dissipation PD 1 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Note.1 PW 10 us, duty cycle 10% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS -1m A, VGS=0V -12 ID= V Gate-Source Breakdown Voltage VGSS IG= 10 A, VDS=0V 7 Zero Gate Voltage Drain Current IDSS VDS=-8V, VGS=0V -1 uA Gate-Body leakage c... See More ⇒

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