View ao3407-3 detailed specification:
SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET AO3407 (KO3407) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = -30V ID = -4.1 A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 52m (VGS = -10V) 0.95 -0.1 D 1.9+0.1 -0.2 RDS(ON) 87m (VGS = -4.5V) 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current Ta = 25 -4.1 ID A Ta = 70 -3.5 Pulsed Drain Current IDM -20 Power Dissipation Ta = 25 1.4 PD W Ta = 70 1 Thermal Resistance.Junction- to-Ambient t 10s 90 RthJA Steady State 125 /W Thermal Resistance.Junction- to-Lead RthJL 60 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 1 www.kexin.com.cn 0.4 +0.2 +0.2 2.8 -0.1 1.6 -0.1 0.55 +0.2 1.1 -0.... See More ⇒
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ao3407-3.pdf Design, MOSFET, Power
ao3407-3.pdf RoHS Compliant, Service, Triacs, Semiconductor
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