View kst8050 detailed specification:
SMD Type Transistors SMD Type NPN Transistors KST8050 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1.5 A Collector Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100 uA, I E = 0 40 V Collector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 25 V Emitter-base Breakdown voltage VEBO IE = 100 uA, I C = 0 5 V Collector-base cut-off current ICBO VCB = 40 V , IE = 0 0.1 A Collector-emitter c... See More ⇒
Keywords - ALL TRANSISTORS SPECS
kst8050.pdf Design, MOSFET, Power
kst8050.pdf RoHS Compliant, Service, Triacs, Semiconductor
kst8050.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



