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SMD Type Transistors SMD Type NPN Transistors KST8050D-50 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 1.2 A Collector Dissipation PC 250 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100 uA, I E = 0 50 V Collector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 50 V Emitter-base Breakdown voltage VEBO IE = 100 uA, I C = 0 6 V Collector-base cut-of... See More ⇒

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