All Transistors. Equivalents Search

View 2n2609 detailed specification:

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top Tstg -65 to +200 C , (1) Derate linearly 1.71 mW/0C for T > +250C. A TO-18 (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (T = +250C unless otherwise noted) A PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units Gate-Source Breakdown Voltage V = 0, I = 1.0 Adc V 30 Vdc DS G (BR)GSS Gate Reverse Current VDS = 0, VGS = 30 Vdc IGSS 30 Adc VDS = 0, VGS = 15 Vdc 22.5 Drain Current V = 0, V = 5.0 Vdc I -2.0 -10.0 mAdc GS DS DDSS Gate-Source Cutoff Voltage V = ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2n2609.pdf Design, MOSFET, Power

 2n2609.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n2609.pdf Database, Innovation, IC, Electricity