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View 2n5457re detailed specification:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5457/D JFETs General Purpose 2N5457 N Channel Depletion 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 2 3 Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc CASE 29 04, STYLE 5 Reverse Gate Source Voltage VGSR 25 Vdc TO 92 (TO 226AA) Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25 C PD 310 mW Derate above 25 C 2.82 mW/ C Junction Temperature Range TJ 125 C Storage Channel Temperature Range Tstg 65 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage V(BR)GSS 25 Vdc (IG = 10 Adc, VDS = 0) Gate Reverse Current IGSS nAdc (VGS = 15 Vdc, VDS = 0) 1.0 (VGS =... See More ⇒

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