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View 2n7000r3 detailed specification:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N Channel Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 29 04, STYLE 22 Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc TO 92 (TO 226AA) Gate Source Voltage Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk Drain Current mAdc Continuous ID 200 Pulsed IDM 500 Total Power Dissipation @ TC = 25 C PD 350 mW Derate above 25 C 2.8 mW/ C Operating and Storage Temperature Range TJ, Tstg 55 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 357 C/W Maximum Lead Temperature for TL 300 C Soldering Purposes, 1/16 from case for 10 seconds ELECTRICAL ... See More ⇒

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