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View mtd6n20e detailed specification:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N20E/D Designer's Data Sheet MTD6N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 6.0 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.7 OHM energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. D Avalanche Energy Specified Source ... See More ⇒

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