View 2sa1897 detailed specification:
DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT mm) for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES High current capacitance Low collector saturation voltage and high hFE Insulation type package supportable for radial taping QUALITY GRADES Standard Please refer to Quality Grades on NEC Semiconductor Devices (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO -30 V Collecto... See More ⇒
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2sa1897.pdf Design, MOSFET, Power
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