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View 2sj133 detailed specification:

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Gate drive available at logic level (VGS = 4 V) High current control available in small dimension due to low RDS(on) ( 0.45 ) 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard Please refer to Quality Grades on NEC Semiconductor Devices (Document No. C11531E) published by NEC Corporation to Electrode connection know the specification of quality grade on the Gate (G) devices and its recommended applications. Drain (D) Source (S) Fin (drain) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) INTERNAL Parameter Symbol Conditions Ratings Unit EQUIVALENT CIRCUIT Drain to source voltage VDSS VGS = 0 -60 V 20 V Gate to source voltage V... See More ⇒

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