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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 7.0 MAX. 1.2 IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. 0.8 0.1 0.6 0.1 FEATURES 0.6 0.1 Radial taping supported 0.6 0.1 Can be directly driven by output of 5-V IC 0.55 0.1 1.7 1.7 Low ON resistance RDS(on) = 0.68 MAX. @VGS = 4 V, ID = 0.8 A RDS(on) = 0.37 MAX. @VGS = 10 V, ID = 1.0 A GD S EQUIVALENT CIRCUIT Drain (D) Internal Gate (G) diode Gate protection PIN CONNECTIONS diode Source (S) S Source D Drain G Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ... See More ⇒

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