View 2sj358 detailed specification:

2sj3582sj358

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings (unit mm) The 2SJ358 is a P-channel vertical MOS FET that can 5.7 0.1 be used as a switching element. The 2SJ358 can be 1.5 0.1 2.0 0.2 directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter. 1 2 3 0.5 0.1 0.5 0.1 FEATURES 0.4 0.05 2.1 0.85 0.1 New-type compact package 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvan- Equivalent Circuit tages Drain (D) Can be directly driven by an IC operating at 5 V. Low on-resistance Electrode Connection 1. Source RDS(ON) = 0.40 MAX. @VGS = 4 V, ID = 1.5 A Gate (G) Internal 2. ... See More ⇒

 

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