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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit mm) The 2SJ462 is a switching device which can be driven directly 5.7 0.1 by an IC operating at 3 V. 1.5 0.1 2.0 0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applica- tions such as power management. 1 2 3 FEATURES 0.5 0.1 0.5 0.1 Can be driven by a 2.5 V power source. 0.4 0.05 New-type compact package. 2.1 0.85 0.1 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. Low on-state resistance. Equivalent Circuit RDS(ON) 0.29 MAX. @VGS = 2.5 V, ID = 0.5 A RDS(ON) 0.19 MAX. @VGS = 4.0 V, ID = 1.0 A Electrode Connection Drain ABSOLUT... See More ⇒

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