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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION (in millimeter) This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5 0.2 10.0 0.3 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 50 m Max. (VGS = 10 V, ID = 10 A) RDS(on)2 = 88 m Max. (VGS = 4 V, ID = 10 A) Low Ciss Ciss = 2360 pF Typ. Built-in Gate Protection Diode 0.7 0.1 1.3 0.2 2.5 0.1 1.5 0.2 0.65 0.1 2.54 2.54 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS 60 V 1. Gate 2. Drain Gate to Source Voltage* VGSS (AC) +20 V 3. Source Gate to Source Voltage VGSS (DC) 20, 0 V 1 2 3 Drain Current (DC) ID (DC) +20 A ISOLATED TO-220 (MP-45F) Drain Current (pulse)** ID (pulse) +8... See More ⇒

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