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View mtd6n20et4 mtd6n20et4g detailed specification:

MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http //onsemi.com applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where 6 AMPERES, 200 VOLTS diode speed and commutating safe operating areas are critical and RDS(on) = 460 mW offer additional safety margin against unexpected voltage transients. Features N-Channel Avalanche Energy Specified D Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits G IDSS and VDS(on) Specified at Elevated Temperature ... See More ⇒

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