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NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD Unit 600 V 360 mW @ 10 V Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS 25 V N-Channel MOSFET Continuous Drain Steady TC = 25 C ID 11 A D (2) Current RqJC State TC = 100 C 6.9 Power Dissipation Steady TC = 25 C PD 114 W RqJC State G (1) Pulsed Drain tp = 10 ms IDM 44 A Current S (3) Operating Junction and Storage TJ, -55 to C Temperature TSTG +150 Source Current (Body Diode) IS 13 A 4 Single Pulse Drain-to-Source Avalanche EAS 64 mJ Energy (ID = 3.5 A) RMS Isolation Voltage (t = 0.3 sec., VISO - V 1 R.H. 30%, TA = 25 C) (Figure 15) 23 Peak Diode... See More ⇒

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