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NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420m , N-Channel Features Electrical Connection High Speed Switching Low Gate Charge 2,4 ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 1 2. Drain 3. Source Absolute Maximum Ratings at Ta = 25 C 4. Drain Parameter Symbol Value Unit 3 Drain to Source Voltage VDSS 250 V V Gate to Source Voltage VGSS 30 A Drain Current (DC) ID 10 Packing Type TL Marking Drain Current (Pulse) A IDP 40 PW 10 s, duty cycle 1% Power Dissipation 1 PD W Tc=25 C 52 10N25 Junction Temperature Tj 150 C TL LOT No. AZ 55 to Storage Temperature Tstg C +150 Source Current (Body Diode) IS 10 A mJ Avalanche Energy (Single Pulse) *1 EAS 15.5 4 Lead Temperature for Soldering C 4 TL 260 Purpo... See More ⇒

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