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View 2sc3311 detailed specification:

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V 1.27 1.27 Peak collector current ICP 200 mA 2.54 0.15 Collector current IC 100 mA 1 Emitter Collector power dissipation PC 300 mW 2 Collector EIAJ SC 72 Junction temperature Tj 150 C 3 Base New S Type Package Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 10V, IB = 0 1 A Collector to base voltage VCBO IC = ... See More ⇒

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