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View 2sc3315 e detailed specification:

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V 2.54 0.15 Emitter to base voltage VEBO 3 V Collector current IC 15 mA 1 Emitter 2 Collector EIAJ SC 72 Collector power dissipation PC 300 mW 3 Base New S Type Package Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V ... See More ⇒

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