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Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 1.3 0.2 1.4 0.1 Parameter Symbol Ratings Unit +0.2 0.5 0.1 0.8 0.1 Collector to base voltage VCBO 800 V VCES 800 V 2.54 0.25 Collector to emitter voltage VCEO 500 V 5.08 0.5 Emitter to base voltage VEBO 8 V 1 2 3 Peak collector current ICP 10 A 1 Base 2 Collector Collector current IC 5 A 3 Emitter Base current IB 3 A TO 220 Full Pack Package(a) Collector power TC=25 C 40 PC W dissipation Ta=25 C 2 Junction temperature Tj 150 C S... See More ⇒

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