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Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High-speed switching 90 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0 Allowing supply with the radial taping 2.25 0.2 0.65 0.1 0.35 0.1 1.05 0.1 Absolute Maximum Ratings (TC=25 C) 0.55 0.1 Parameter Symbol Ratings Unit 0.55 0.1 Collector to base voltage VCBO 900 V VCES 900 V C1.0 1 2 3 Collector to emitter voltage VCEO 800 V 2.5 0.2 2.5 0.2 Emitter to base voltage VEBO 7 V 1 Base Peak collector current ICP 2 A 2 Collector 3 Emitter Collector current IC 1 A MT4 Type Package Base current IB 0.3 A Collector power TC=25 C 15 PC W dissipation Ta=25 C 2 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical... See More ⇒

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