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View 2sd1205 e detailed specification:

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 3 2 1 Parameter Symbol Ratings Unit Collector to 2SD1205 30 VCBO V 2.5 2.5 base voltage 2SD1205A 60 Collector to 2SD1205 25 1 Base VCEO V 2 Collector EIAJ SC 71 emitter voltage 2SD1205A 50 3 Emitter M Type Mold Package Emitter to base voltage VEBO 5 V Internal Connection Peak collector current ICP 750 mA Collector cur... See More ⇒

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