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Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB938 and 2SB938A Features High foward current transfer ratio hFE High-speed switching 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit board, etc. of small electronic equipment. 2.54 0.3 Absolute Maximum Ratings (TC=25 C) 5.08 0.5 1 Base Parameter Symbol Ratings Unit 1 2 3 2 Collector Collector to 2SD1261 60 3 Emitter VCBO V N Type Package base voltage 2SD1261A 80 Unit mm Collector to 2SD1261 60 8.5 0.2 3.4 0.3 VCEO V 6.0 0.3 1.0 0.1 emitter voltage 2SD1261A 80 Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A R0.5 Collector power TC=25 C 40 0.8 ... See More ⇒

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