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Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw 3.1 0.1 Absolute Maximum Ratings (TC=25 C) Parameter Symbol Ratings Unit Collector to 2SD1266 60 VCBO V 1.3 0.2 1.4 0.1 base voltage 2SD1266A 80 Collector to 2SD1266 60 +0.2 0.5 0.1 VCEO V 0.8 0.1 emitter voltage 2SD1266A 80 Emitter to base voltage VEBO 6 V 2.54 0.25 Peak collector current ICP 5 A 5.08 0.5 Collector current IC 3 A 1 2 3 1 Base Collector power TC=25 C 35 PC W 2 Collector dissipation Ta=25 C 2 3 Emitter TO 220 Full Pack P... See More ⇒

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