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Silicon Junction FETs (Small Signal) 2SJ163 2SJ163 Silicon P-Channel Junction Unit mm For general use switching +0.2 2.8 0.3 Complementary with 2SK1103 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4 0.2 Drain current ID 20 mA Gate current IG 10 mA 1 Source JEDEC TO-236 Allowable power dissipation PD 150 mW 2 Drain EIAJ SC-59 Channel temperature Tch 150 C 3 Gate Mini Type Package (3-pin) Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS= 10V, VGS= 0 0.2 6 mA Gate-Source leakage current IGSS VGS= 30V, VDS= 0 10 nA Gate-Drain voltage VGDS IG... See More ⇒

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