All Transistors. Equivalents Search

View 2sj164 detailed specification:

Silicon Junction FETs (Small Signal) 2SJ164 2SJ164 Silicon P-Channel Junction Unit mm For switching 4.0 0.2 Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 1.27 1.27 1 Source Gate-Drain voltage VGDS 65 V 2.54 0.15 2 Gate Drain current ID 20 mA 3 Drain Gate current IG 10 mA New S Type Package Allowable power dissipation PD 300 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS= 10V, VGS= 0 0.2 6 mA Gate-Source leakage current IGSS VGS= 30V, VDS= 0 10 nA Gate-Drain voltage VGDS IG=10 A, VDS= 0 65 V Gate-Source cut-off voltage VGSC VDS= 10V, ID= 10 A 1.5 3.5 ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sj164.pdf Design, MOSFET, Power

 2sj164.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj164.pdf Database, Innovation, IC, Electricity