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Power F-MOS FETs 2SK1612 2SK1612 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 1.4 0.1 For high-frequency power amplification +0.2 0.5 -0.1 0.8 0.1 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 2.54 0.25 Drain-Source breakdown voltage VDSS 900 V 5.08 0.5 Gate-Source voltage VGSS 30 V 1 2 3 DC ID 3 A Drain current Pulse IDP 6 A 1 Gate 2 Drain Avalanche energy capability EAS* 15 mJ 3 Source TC = 25 C 50 Allowable power TO-220 Full Pack Package (a) PD W dissipation Ta = 25 C 2 Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C * Single pulse Absolute ... See More ⇒

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