All Transistors. Equivalents Search

View 2sk2495 detailed specification:

Power F-MOS FETs 2SK2495 2SK2495 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 High-speed switching No secondary breakdown Applications 1.5max. 1.1max. High-speed switching (switching mode regulator) For high-frequency power amplification 0.8 0.1 0.5max. 2.54 0.3 5.08 0.5 Absolute Maximum Ratings (Tc = 25 C) 1 2 3 Parameter Symbol Unit Rating 1 Gate Drain-Source breakdown voltage VDSS V 250 2 Drain Gate-Source voltage VGSS V 30 3 Source DC ID A 2 N Type Package Drain current Pulse IDP A 4 Avalanche energy capability EAS * mJ 10 TC= 25 C 30 Allowable power PD W dissipation Ta= 25 C 1.3 Channel temperature Tch C 150 Storage temperature Tstg 55 to +150 C * L= 5mH, IL= 2A, VDD= 30V, 1 pulse Electrical Characteristics (Tc = 25 C)... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sk2495.pdf Design, MOSFET, Power

 2sk2495.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk2495.pdf Database, Innovation, IC, Electricity