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View 2n7000-03 detailed specification:

2N7000 N-channel enhancement mode field-effect transistor Rev. 03 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS technology Very fast switching Logic level compatible. 3. Applications Relay driver High speed line driver Logic level translator. c c 4. Pinning information Table 1 Pinning - SOT54, simplified outline and symbol Pin Description Simplified outline Symbol 1 drain (d) d 2 gate (g) 3 source (s) g 03ab40 03ab30 3 2 1 s SOT54 (TO-92 variant) N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. 2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2 Quick reference data ... See More ⇒

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