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2N7002KA N-channel TrenchMOS FET Rev. 03 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge (ESD) protection diodes 1.3 Applications Relay driver High-speed line driver 1.4 Quick reference data VDS 60 V ID 320 mA RDSon 4.4 Ptot 0.83 W 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 gate (G) 3 D 2 source (S) 3 drain (D) G 12 SOT23 (TO-236AB) S 003aac036 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version 2N7002KA TO-236AB plastic s... See More ⇒

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