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2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching 1.3 Applications High-speed line driver Relay driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tamb = 25 C - - 60 V voltage VGS gate-source -20 - 20 V voltage [1] ID drain current VGS =10V; Tamb =25 C - - 310 mA Static characteristics RDSon drain-source VGS =10V; ID =500mA; - 1 1.6 on-state Tj =25 C; tp 300 s; pulsed; r... See More ⇒

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