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View bc635 bc637 bc639 detailed specification:

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS 3 emitter Driver stages of audio/video amplifiers. DESCRIPTION 1 handbook, halfpage 2 2 NPN transistor in a TO-92; SOT54 plastic package. 3 PNP complements BC636, BC638 and BC640. 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC635 - 45 V BC637 - 60 V BC639 - 100 V VCEO collector-... See More ⇒

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