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Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 30 A low on-state resistance and has Ptot Total power dissipation 68 W integral zener diodes giving ESD Tj Junction temperature 175 C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 35 m use in switched mode power supplies resistance VGS = 10 V and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absol... See More ⇒

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