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2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ221 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 100 V DSS Gate to source voltage V 20 V GSS Drain current I 20 A D Drain peak current I Note 1 80 A D (pulse) Body to drain diode reverse drain current I 20 A DR Channel dissipation Pch Note 2 75 W Channel temperature Tch 1... See More ⇒

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