View 2sj319 detailed specification:
2SJ319(L), 2SJ319(S) Silicon P Channel MOS FET REJ03G0858-0200 (Previous ADE-208-1192) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(1) ) (Package name DPAK (S) ) 4 D 4 1. Gate 2. Drain G 1 2 3. Source 3 4. Drain 1 S 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2SJ319(L), 2SJ319(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 200 V DSS Gate to source voltage V 20 V GSS Drain current I 3 A D Drain peak current I Note 1 12 A D (pulse) Body to drain diode reverse drain current I 3 A DR Channel dissipa... See More ⇒
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2sj319.pdf Design, MOSFET, Power
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