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2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.3.00 Sep 07, 2005 page 1 of 7 2SJ496 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 5 A D Drain peak current I Note 1 20 A D (pulse) Body to drain diode reverse drain current I 5 A DR Avalanche current I Note 3 5 A AP Avalanche energy E Note 3 2.14 mJ AR Channel dissipation Pch Note 2 0.9 W Channel temperat... See More ⇒

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