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View 2sj505 detailed specification:

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK (L) ) (Package name LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Rev.5.00 Jun 05, 2006 page 1 of 8 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 50 A Drain peak current ID (pulse) Note 1 200 A Body to drain diode reverse drain current IDR 50 A Avalanche current IAP Note 3 50 A Avalanche energy EAR Note 3 214 mJ... See More ⇒

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