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2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Package name DPAK (S) ) 4 4 D 1. Gate 2. Drain G 1 2 3. Source 3 4. Drain 1 2 3 S Rev.5.00 Sep 07, 2005 page 1 of 7 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 10 A D Drain peak current I Note 1 40 A D (pulse) Body to drain diode reverse drain current I 10 A DR Channel ... See More ⇒

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